James C. Sturm
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James C. Sturm
William and Edna Macaleer Professor of Engineering and Applied Science, Professor of Electrical Engineering
Director, Princeton Institute for the Science and Technology of Materials (PRISM)
Ph.D. 1985, Stanford University
Materials, Processing, and Devices for Microelectronics and
Macroelectronics. The continual scaling of VLSI devices to smaller dimensions,
higher performance, and higher integration levels over the last thirty years
has directly enabled the "information society." Scaling has reduced
the cost of intelligence (that is, electronic circuits) by some six orders of
magnitude, while performance has continuously increased. Continued growth of
the information economy depends on the further scaling of silicon-based
electronic devices to the 0.1 micron (nanoscale) level and beyond. Our group
works to achieve this goal through the science and technology of silicon-based
heterojunctions and three-dimensional integration for VLSI. The work involves
the growth of novel materials on a near-atomic scale, materials processing, and
finally their application into electronic devices such as heterojunction
transistors, FET's, quantum devices, and also optoelectronic devices such as
infrared detectors and emitters. Specific focuses in our lab include rapid
thermal chemical vapor deposition, silicon-germanium and
silicon-germanium-carbon alloys, silicon-on-insulator, and heterojunction
devices.
On the other extreme, many electronic information processing systems as a
whole are limited on both a fundamental and practical economic level by the
human-machine interface. For example, the ability to deliver high-quality
video is often limited by the display. In this area it is generally desirable
to make products big (for example, the display), as opposed to making them
small, as in traditional microelectronics; hence the label
"macroelectronics" has emerged. Because low cost over a large area
is a requirement for widespread impact in the future in this field, materials
and technologies very different from VLSI are necessary. For example,
polycrystalline and amorphous materials, instead of single crystals, and
low-cost alternatives to conventional photolithography and etching are highly
desirable. To this end, our lab focuses on organic and polymeric
semiconductors because of their ease of deposition over large areas (and
applications to organic LED's and FET's) as well as on amorphous and
polycrystalline silicon for TFT's. Coupled with these materials are efforts to
pattern them and fabricate devices using large-area printing technologies such
as ink-jet printing, as well as work to fabricate systems such as flat panel
displays on unconventional flexible and lightweight substrates.
These projects both encompass a wide range of activities ranging from basic
materials science and physics to electrical engineering and industrial
collaboration, and benefit extensively from the interdisciplinary nature of the
Center for Photonic and Optoelectronic Materials (POEM) at Princeton and the
Princeton Materials Institute (PMI).
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