Princeton University

School of Engineering & Applied Science

FinFet-based SRAM and Monolithic 3-D Integrated Circuit Design

Speaker: 
Abdullah Guler
Advisor: 
Prof. Jha
Location: 
Engineering Quadrangle B327
Date/Time: 
Thursday, June 27, 2019 - 10:30am to 12:00pm

Abstract

Device scaling, an enabler of faster and more powerful processors for decades, has become challenging due to physical limits and manufacturing costs. Thus, we need newer approaches for low-power and high-performance designs for next generation computing technologies. In this talk, we focus on FinFET-based static random access memory (SRAM) and hybrid monolithic 3-D integrated circuit (IC) design.

First, we will discuss the design of area-efficient, low-power, and high-performance SRAM cells, which often occupy more than half the die area in processors. We will investigate two approaches: multi-parameter asymmetric (MPA) FinFET-based and 3-D transistor-level monolithic (TLM) SRAM design. In the first approach, we will use FinFETs with up to three asymmetries to address SRAM challenges such as high leakage power, read-write conflict, and width quantization at once. In the second approach, we will present two new area-efficient 3-D monolithic 8T SRAM cells that consist of four n-type and four p-type transistors. The proposed cells provide superior read performance and power efficiency when compared to other 2-D/3-D SRAM cells.

Second, we will explore the benefits of monolithic 3-D design from the circuit to the multi-core system level. We will focus on hybrid monolithic (HM) designs, which combine modules implemented in different monolithic styles to utilize their advantages. We will discuss a 3-D HM floorplanner, gate-level placement methodology, and modeling tools for logic, memory, and NoC modules. We have integrated these tools into McPAT-monolithic, an area/timing/power architectural modeling framework we have developed for HM multi-core systems.