Address:
Department of Electrical Engineering Princeton University J-301 E-Quad, Olden St. Princeton, NJ 08544 Phone: 609-258-5610 Fax: 609-258-1954Email: sturm@ee.princeton.edu
Research Group Homepage: http://www.ee.princeton.edu/~sturmlab/
Fields of Research Activity: Devices, materials, and processes for microelectronics and for macroelectronics. Silicon-based heterostructures, Si1-x-yGexCy materials and devices, three-dimensional integration, large-area electronics, organic light emitting diodes, thin film transistors, flat panel and flexible displays, biological applications of nanostructures.
Experience: thirteen years at Princeton, one year at Stanford University as a research associate, twenty years experience in the field of semiconductor devices and physics and integrated circuit fabrication.
Biography: James Sturm received his B.S.E. (Electrical Engineering, Engineering Physics) from Princeton in 1979 and his M.S.E.E. (1981) and Ph.D. (1985) from Stanford. He spent one year as a Research Associate in the Solid-State Lab at Stanford before coming to Princeton. Industrial experience has included one year at Intel and shorter periods at Siemens (Germany) and Western Electric. In 1987 he was named by NSF as a Presidential Young Investigator. In 1994 he was a Von Humboldt Fellow at the University of Stuttgart, Germany. Professor Sturm has served as chair of the Solid State Devices and Detectors, Sensors, and Displays committees of the International Electron Devices Meeting, Technical and General Chair of the Device Research Conference, and as co-chair of several symposia as part of the Materials Research Society.
Membership in Societies: IEEE, American Physical Society, Materials Research Society, Tau Beta Pi, Phi Beta Kappa.
Typical Publications:
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1. |
"Three-Color Organic Light-Emitting Diodes Patterned by Masked Dye Diffusion," F. Pschenitzka and J.C. Sturm. Appl. Phys. Lett. 74, 1913-1915 (1999). |
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2. |
"25 Nanometer Vertical P-Channel MOSFET’s With SiGeC Source/Drain," M. Yang, C.L. Chang, M. Carroll, and J.C. Sturm. IEEE Elec. Dev. Lett. 20, 301-303 (1999). |
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3. |
"Ink Jet Printing of Doped Polymers for Organic Light-Emitting Devices," T. Hebner, C.C. Wu, D. Marcy, M.H. Lu, and J.C. Sturm. Appl. Phys. Lett. 72, 519-521 (1998). |
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4. |
"Suppression of Boron Transient Enhanced Diffusion in SiGe Heterojunction Bolar Transistors by Carbon Incorporation," L.D. Lanzerotti, J.C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, and C. Magee. Appl. Phys. Lett. 70, 3125-3126 (1998). |
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5. |
"Teaching Systems Performance Limitations Through an Integrated CircuitFabricationLaboratory," D.L. Marcy and J.C. Sturm. Proc. Amer. Soc. Eng'g. Education Annual Conf., June 1997. |
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6. |
"Efficient Organic Electroluminescent Devices Using Single-Layer Doped Polymer Thin Films With Bolar Transport Abilities," C.C. Wu, J.C. Sturm, R.A. Register, J. Tian, E.P. Dona, and M.E. Thompson. IEEE Trans. Elec. Dev, 44, 1269-1281 (1997). |
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7. |
"Non-Invasive Measuremnt of Charing in Plasmas Using Novel Microelectromechanical Charge Sensors," K. Pangal and J.C. Sturm. Appl. Phys. Lett. 69, 1471-3 (1996). |
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8. |
"Silicide/Strained Si1-xGex Schottky-Barrier Infrared Detectors, X. Xiao," J.C. Sturm, S.J. Parihar, S.A. Lyon, D. Meyerhofer, S. Palfrey, and F.V. Shallcross. IEEE Elec. Dev. Lett. EDL-14, 199-201, (1993). |
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9. |
"Well-Resolved Band-Edge Photoluminescence of Excitons Confined in Strained Si1-xGex Quantum Wells," J.C. Sturm, H. Manoharan, L.C. Lenchyshyn, M.L.W. Thewalt, N.L. Rowell, J-P Noel, and D.C. Houghton. Phys. Rev. Lett. 66, 1362-1365 (1991). |
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10. |
"Current-Gain Early Voltage Products in Si/Si1-xGex/Si Heterojunction Bipolar Transistors," E.J. Prinz and J.C. Sturm. IEEE Elec. Dev. Lett. EDL-12, 661-663 (1991). |
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11. |
"Fabry-Perot Optical Intensity Modulator at 1.3 Micron in Silicon," J.C. Sturm, X. Xiao, K.K.Goel, and P.V. Schwartz. IEEE Photonics Tech. Lett. PTL-3 , 230-232 (1991). |
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12. |
"Silicon Temperature Measurement by Infrared Transmission for Rapid Processing Applications," J.C. Sturm, P.V. Schwartz and P.M. Garone. Applied Physics Letters, 56 , 961 (1990). |
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13. |
"Increased Drain Saturation Current in Ultra-Thin Silicon-on-Insulator (SOI) MOS Transistors," J.C. Sturm, K. Tokunaga and J-P. Colinge. IEEE Electron Dev. Lett. EDL-9 , 460-463 (1988). |
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14. |
"A Three-Dimensional Folded Dynamic RAM in Beam-Recrystallized Polysilicon," J.C. Sturm, M.D. Giles and J.F. Gibbons. IEEE Electron Dev. Lett. EDL-5 , 151-153 (1984). |